FMBM5551-SB16001

Overview

The FMBM5551-SB16001 is a dual NPN bipolar junction transistor array manufactured by onsemi. It features a maximum collector-emitter voltage of 160V and a continuous collector current of 600mA. The device operates with a transition frequency of 300MHz and dissipates up to 700mW of power. Designed for surface mount applications, it utilizes the SuperSOT™-6 package (TSOT-23-6). Key electrical characteristics include a DC current gain of 80 at 10mA/5V and a saturation voltage of 200mV at 5mA base/50mA collector current.

Feature Summary

• Dual NPN configuration within a single compact surface mount package
• High voltage capability suitable for general-purpose amplification
• Optimized thermal performance with low saturation voltage

Applications

• General-purpose amplification circuits
• Switching applications requiring high voltage isolation
• Signal processing in consumer electronics

Procurement Notes

Verify the exact ordering part number against the manufacturer's official documentation to ensure compatibility with the SuperSOT-6 package and specific electrical ratings. Confirm that the requested variant matches the required voltage and current specifications for the intended design application before finalizing procurement.

Selection Notes

Select this component when a dual NPN transistor array is required for space-constrained designs. Ensure the circuit requirements align with the 160V breakdown voltage and 600mA current limits. Consider the 300MHz transition frequency for signal integrity in high-speed switching or amplification tasks.

Part Context

This component belongs to onsemi's lineup of bipolar transistor arrays, designed to simplify board layout by integrating two transistors into one footprint. The SuperSOT-6 package offers a small form factor compared to traditional discrete packages, aiding in miniaturization of electronic devices.

Replacement Considerations

FMB5551