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Product Detailed Parameters
- Description：IGBT, 150A, 600V, N-CHANNEL
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 150A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：150 A
- Power - Max：595 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：-
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Overview
The FMG1G150US60L is a single IGBT power module manufactured by Fairchild Semiconductor. It features a 600V collector-emitter voltage rating and a 150A continuous collector current capability. The module utilizes Field Stop IGBT technology to achieve low saturation voltage, specified as 2.1V at the rated current. Designed for chassis mounting, this component integrates high input impedance and fast switching characteristics within a robust package suitable for industrial power conversion applications.
Feature Summary
- Integrates Field Stop IGBT technology for optimized conduction and switching performance
- Provides high short-circuit ruggedness for reliable operation under fault conditions
- Features low saturation voltage to minimize conduction losses in high-current scenarios
Applications
- Industrial motor drives and servo systems
- Uninterruptible power supply (UPS) inverters
- High-frequency induction heating equipment
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation to confirm current production status and technical specifications. Ensure that thermal management solutions align with the module's power dissipation requirements. Confirm mechanical compatibility with existing chassis mounting structures before integration into the design.
Selection Notes
Select this module for applications requiring high current handling at 600V levels. Consider the trade-off between its low saturation voltage and switching speed relative to system efficiency targets. Evaluate the thermal resistance characteristics against the available heatsink capacity to ensure junction temperatures remain within safe operating limits during peak load operations.
Part Context
This component belongs to Fairchild's line of insulated gate bipolar transistor power modules. These modules are engineered to replace discrete IGBT assemblies, offering improved reliability and reduced parasitic inductance. The product family emphasizes compact packaging and enhanced electrical performance for demanding power electronics environments.
Replacement Considerations
Consult official substitution guides for equivalent modules from Fairchild or onsemi. Verify pinout compatibility and thermal interface dimensions when considering alternative part numbers.
