FMMT411FDBW-7

$1.11

Description：TRANS NPN 15V 5A W-DFN2020-3
Series：-

SKU:121057af5c1e Category: Single Bipolar Transistors Brand: Diodes Incorporated

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Product introduction

FMMT411FDBW-7 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 15V 5A W-DFN2020-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FMMT411FDBW-7

Description：TRANS NPN 15V 5A W-DFN2020-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Transistor Type：NPN - Avalanche Mode
Current - Collector (Ic) (Max)：5:00 AM
Voltage - Collector Emitter Breakdown (Max)：15 V
Vce Saturation (Max) @ Ib, Ic：100mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 10V
Power - Max：1.7 W
Frequency - Transition：110MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：3-UDFN Exposed Pad
Supplier Device Package：W-DFN2020-3 (Type A)
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for FMMT411FDBW-7

FMMT411FDBW-7

Single Bipolar Transistors Overview

The FMMT411FDBW-7 is an NPN low voltage avalanche transistor manufactured by Diodes Incorporated. It operates in a W-DFN2020-3 package with a nominal height of 0.62mm. Key electrical parameters include a collector-base breakdown voltage (BVCBO) exceeding 80V, a collector-emitter breakdown voltage (BVCEO) exceeding 15V, and a continuous collector current rating of 5A. The device features a typical USB current of 35A and a transition frequency (fT) of 110MHz.

Single Bipolar Transistors Feature Summary

Specifically designed for low voltage avalanche mode operation
Low profile 0.62mm high package suitable for thin applications
Sidewall tin plating ensures wettable flanks for automated optical inspection

Single Bipolar Transistors Applications

Laser diode drivers for ranging and measurement (LIDAR)
Radar systems
Fast edge switch generator
High-speed pulse generators

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-7' to confirm reel packaging details. Ensure the application design accounts for thermal resistance variations based on PCB copper area and layout. Confirm compliance requirements against RoHS and halogen-free standards as defined by the manufacturer.

Single Bipolar Transistors Selection Notes

Select this component when low voltage avalanche switching is required within a compact footprint. The W-DFN2020-3 package provides a low-profile solution ideal for space-constrained designs. Evaluate thermal dissipation capabilities carefully, as performance depends heavily on the specific PCB copper area utilized during implementation.

Single Bipolar Transistors Part Context

This part belongs to the FMMT411 series of silicon planar bipolar transistors engineered for avalanche mode. It utilizes tight process control and low inductance packaging to generate high on-current pulses with fast edges. The device is distinct from higher voltage avalanche counterparts due to its specific low-voltage breakdown characteristics.