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The FMY4AT148 is a dual bipolar junction transistor array manufactured by ROHM Semiconductor, featuring one NPN and one PNP element in an SMT5 (SC-74A) surface-mount package. It supports a maximum collector current of 150 mA with voltage ratings of 50 V for the NPN section and 60 V for the PNP section. The device offers transition frequencies of 140 MHz for the NPN and 180 MHz for the PNP configurations. Key electrical parameters include a minimum DC current gain (hFE) of 120 at 1 mA and 6 V, a maximum power dissipation of 300 mW, and a saturation voltage of 500 mV at 5 mA base and 50 mA collector currents. The operating junction temperature reaches up to 150°C.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate tape-and-reel packaging variations. Ensure design compatibility with standard surface-mount assembly processes before finalizing procurement plans.
Select this component when a mixed NPN/PNP pair is required in a minimal space-constrained layout. Evaluate thermal management requirements against the 300 mW power dissipation limit. Compare transition frequencies and saturation voltages against circuit speed and efficiency targets to ensure optimal performance under expected load conditions.
This part belongs to the FMY4 series of dual bipolar transistor arrays produced by ROHM Semiconductor. It utilizes the SMT5 package format, also identified as SC-74A or SOT-753, designed for automated surface-mount technology assembly. The series provides integrated solutions for applications requiring complementary transistor pairs without discrete component placement.
The UMZ1NTR is documented as a similar alternative from ROHM Semiconductor. Verify pinout compatibility and electrical parameter alignment before substitution.