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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Box
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：85 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 250µ, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The FN4L4M-T1B-A is a single NPN pre-biased bipolar junction transistor (BJT) manufactured by Renesas Electronics Corporation. It integrates internal biasing resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. Power dissipation is rated at 200 mW. The base resistor (R1) is specified at 22 Ohms, facilitating direct interface with logic gates without external components.
Feature Summary
- Integrates internal base biasing resistors for simplified circuit implementation
- Provides high-density packaging solution reducing board space requirements
- Designed for direct logic gate interfacing in digital switching applications
Applications
- Digital logic level shifting circuits
- General-purpose switching applications
- Interface circuits between microcontrollers and loads
Procurement Notes
Verify the specific package marking code and tape/reel configuration against the official Renesas datasheet before procurement. Ensure the supplier provides traceable documentation confirming the part number FN4L4M-T1B-A. Check for any recent obsolescence notices or lifecycle status updates directly from the manufacturer's official channels to avoid sourcing discontinued inventory.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. It is suitable for applications where board space is limited and external biasing resistors are undesirable. Consider the 200 mW power dissipation limit and 50 V voltage rating to ensure operation within safe limits for the intended load conditions.
Part Context
This component belongs to Renesas' series of pre-biased transistors designed for digital applications. These devices combine a BJT with internal resistors to replace multiple discrete components. The FN4L4M-T1B-A specifically offers an NPN configuration with defined resistance values to streamline design processes in consumer electronics and industrial control systems.
Replacement Considerations
Consult the official Renesas cross-reference guide for verified substitute part numbers. Do not assume functional equivalence based solely on electrical parameters; verify pinout compatibility and internal resistor values with the original specification.
