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The FP100R12KT4B11BOSA1 is a three-phase inverter IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4 technology. It features a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 100 A at 95°C case temperature. The module integrates fast Trench/Fieldstop IGBTs with Emitter Controlled 4 diodes and an NTC sensor. Key electrical parameters include a typical VCEsat of 1.75 V at 25°C and a total power dissipation of 515 W. It operates within a junction temperature range of -40°C to 150°C under switching conditions.
Verify the exact ordering suffix against official documentation to confirm specific manufacturing revisions or regional compliance variations. Ensure that the component matches the required technical specifications for your application before procurement. Cross-reference datasheet revision numbers to guarantee compatibility with existing designs.
Select this module for applications requiring robust thermal cycling performance and efficient power conversion. Consider the 1200 V rating and 100 A current capacity when designing motor drive or servo systems. Evaluate the integration of the NTC sensor for simplified thermal management strategies in compact power electronics designs.
This component belongs to the EconoPIM3 series by Infineon Technologies. It is designed as a complete three-phase inverter solution. The module combines advanced semiconductor technology with a standardized housing format. This facilitates easy integration into industrial power conversion systems while maintaining high reliability standards.
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other modules without verifying pinout and electrical parameter alignment.