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The FP100R12N3T4PB81BPSA1 is an IGBT module from Infineon Technologies, part of the ECONO series. It features a Trench Field-Stop technology for optimized switching and conduction losses. The device integrates an N-channel IGBT with a fast recovery anti-parallel diode in a single package. Key electrical parameters include a collector-emitter voltage (Vces) of 1200 V and a continuous collector current (Ic) of 100 A at 25°C. The module utilizes a silver sintered die attach process for enhanced thermal cycling reliability. It is housed in the AG-ECONO3-3 package, designed for efficient heat dissipation through a ceramic substrate.
Verify the complete ordering code against official Infineon documentation to ensure correct suffix alignment. Confirm RoHS compliance status and specific packaging type requirements prior to procurement. Cross-reference the manufacturer's latest datasheet for any updates on recommended soldering profiles or storage conditions.
Select this component based on its 1200 V blocking capability and 100 A current rating suitable for medium-power applications. Evaluate the thermal resistance characteristics of the AG-ECONO3-3 package against the system's cooling constraints. Ensure the gate drive voltage compatibility with the specified Trench Field-Stop technology requirements.
This module belongs to Infineon's ECONO family, known for cost-effective solutions in industrial power electronics. The FP100R12 series specifically targets applications requiring robust performance in moderate power ranges. The T4 variant indicates specific internal design iterations within the broader product line.
Direct replacements may include other FP100R12 variants with compatible pinouts and electrical ratings. Verify mechanical dimensions and thermal interface specifications when substituting with modules from different series or manufacturers.