SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP10R12W1T7PBPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the LOW POWER EASY series. It features a 3-phase inverter configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 10 A at 25°C. The saturation voltage is 1.85 V, while the gate-emitter leakage current is rated at 400 nA. Operating within a temperature range of -40°C to +150°C, it dissipates up to 105 W of power. Packaged in a tray, this component utilizes Trenchstop IGBT4 technology for reliable performance in power conversion applications.
Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical parameters and packaging details. Confirm RoHS compliance status and moisture sensitivity level prior to integration. Ensure that the selected variant matches the required thermal management specifications for the target application environment.
Select this module when a low-power three-phase solution is required. Compare the 10 A current rating and 1.85 V saturation voltage against system load requirements. Evaluate the thermal dissipation capabilities relative to the available heatsinking infrastructure. Verify compatibility with standard gate drive voltages and protection circuits.
This component belongs to the FP10R12 family of EasyPIM modules. It shares the 1200 V voltage class with other variants but differs in current ratings and specific technological generations. The FP10R12W1T7PBPSA1 represents a specific iteration within the Trenchstop IGBT4 lineup, designed for cost-effective and space-constrained power electronics designs.
Direct substitutes include other FP10R12 series modules such as FP10R12W1T4_B3. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference datasheets to ensure equivalent switching speeds and voltage ratings are maintained.