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The FP10R12YT3B4BOMA1 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies. It features a Trench/Fieldstop IGBT technology and an Emitter Controlled diode, integrated with an NTC thermistor for thermal monitoring. The device is housed in a MODULE-23 package, designed for high-power applications requiring robust switching performance and low conduction losses.
Verify the exact suffix B4BOMA1 against official Infineon documentation to confirm specific binning or testing variations. Ensure compatibility with existing gate drive circuits and thermal management solutions before integration into the design.
Select this module for applications requiring 1200V blocking voltage and moderate current handling within a compact flange-mount package. Consider the thermal resistance and mounting torque specifications provided in the datasheet to ensure reliable long-term operation under load.
This component belongs to Infineon's EasyPIM family of intelligent power modules. It combines power semiconductors with control electronics, offering a compact solution for power conversion systems. The MODULE-23 package provides a standardized form factor for easy integration into various industrial platforms.
Direct replacements may include other Infineon EasyPIM variants with similar voltage and current ratings. Verify pinout compatibility and thermal interface requirements when substituting with equivalent models from the same product family.