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The FP10R12YT3BOMA1 is a discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an N-channel configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 16 A at 25°C. The device utilizes Trenchstop technology for efficient switching performance. It operates within a junction temperature range of -40°C to +150°C and is housed in a flange-mount module package designed for thermal management.
Verify the specific suffix BOMA1 against official datasheets to confirm pinout and electrical parameters, as suffixes often denote packaging or testing variations. Confirm availability status directly with authorized distributors, as component lifecycle stages can change without immediate public notice.
Select this component for applications requiring robust 1200V blocking capability with moderate current handling. Ensure the cooling solution supports the thermal resistance requirements of the flange-mount package. Verify gate drive compatibility with the specified Trenchstop technology characteristics.
This part belongs to Infineon's discrete IGBT portfolio, specifically utilizing Trenchstop technology which balances low conduction losses with manageable switching speeds. It serves as a fundamental switching element in power conversion circuits where reliability under high voltage stress is critical.
Direct replacements must match the 1200V/16A rating and flange-mount form factor. Consider equivalent models from the same Trenchstop family or other manufacturers offering similar Vceo and Ic specifications in compatible packages.