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The FP150R12N3T7_B11 is an EconoPIM™3 module integrating TRENCHSTOP™ IGBT7 and EC7 diodes. It features a 1200 V collector-emitter voltage (VCES) and a nominal continuous DC collector current of 150 A at 80 °C case temperature, with a repetitive peak current of 300 A. The inverter IGBT exhibits a typical saturation voltage (VCE,sat) of 1.55 V at 25 °C. The integrated rectifier diode supports a maximum RMS forward current of 150 A at 100 °C. The brake-chopper IGBT handles 100 A continuously, while its associated diode manages 50 A. An NTC thermistor with a rated resistance of 5 kΩ at 25 °C is included for thermal monitoring.
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical interface and terminal configuration. Ensure compatibility with required gate driver isolation standards. Confirm that the application environment meets the specified industrial qualification requirements defined by relevant IEC standards before finalizing procurement.
Select this module for applications requiring high power density and optimized switching performance at moderate frequencies. Verify that the thermal management system can maintain the case temperature within limits to support the 150 A continuous rating. Consider the internal gate resistor values when designing the external gate drive circuitry to achieve desired switching speeds.
This component belongs to the EconoPIM™3 series from Infineon Technologies. It utilizes the seventh generation of TRENCHSTOP™ IGBT technology combined with emitter-controlled diodes. The module is designed specifically for variable speed drives and industrial applications where efficiency and reliability are critical operational parameters.
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout, insulation coordination, and thermal characteristics. Do not assume functional equivalence based solely on voltage and current ratings without verifying package dimensions and mounting requirements.