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The FP25R12KT4B11BOSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT technology. It features a 1200 V collector-emitter voltage (VCES) and a continuous DC collector current of 25 A at TC = 100°C, with a repetitive peak current of 50 A. The total power dissipation is 160 W at TC = 25°C. The module supports an extended junction temperature operation up to 150°C, with a maximum rating of 175°C. It includes an integrated NTC thermistor rated at 5 kΩ at 25°C for thermal monitoring.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm exact manufacturing specifications and compliance status. Ensure that the procurement channel provides valid traceability data matching the module serial number and datecode printed on the component label.
Select this module for applications requiring high power cycling capability and low switching losses. Confirm that the gate drive circuitry aligns with the recommended minimum resistances for 0V/+15V operation. Verify that the system's thermal design accommodates the specified junction-to-case thermal resistance values under expected load conditions.
This component belongs to the Infineon EconoPIM™2 series, designed for three-phase inverter configurations. It combines rectifier, inverter, and brake-chopper functions into a compact form factor. The module utilizes silicon technology and is part of the broader family of intelligent power modules aimed at industrial and automotive power conversion systems.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference documentation or application notes for verified alternative components before implementation.