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The FP25R12KT4B11 is a three-phase PIM IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode. It features PressFIT contact technology and an integrated NTC temperature sensor within the EconoPIM2 housing. The inverter IGBT supports a collector-emitter voltage of 1200 V, a continuous DC collector current of 25 A at 100°C, and a repetitive peak current of 50 A. The rectifier diode handles up to 1600 V with a maximum RMS forward current of 80 A. The brake-chopper IGBT provides 1200 V blocking capability with a continuous current of 15 A. The module operates between -40°C and +150°C, with a maximum junction temperature of 175°C for the inverter and brake-chopper sections.
Verify component authenticity by cross-referencing the module label code against Infineon documentation. Confirm that the ordering suffix B11 matches the required specifications without altering functional parameters. Ensure compliance with RoHS standards and verify UL approval status (E83335) for intended industrial applications before finalizing procurement orders.
Select this module for applications requiring robust thermal cycling performance and low switching losses. The integrated NTC sensor facilitates precise thermal management. Verify gate resistor requirements, specifically noting recommendations for minimum Rgon and Rgoff values when operating with Vge=0V/+15V. Ensure heatsink interface materials meet the specified thermal resistance criteria for optimal junction-to-case performance.
This component belongs to the EconoPIM2 series from Infineon Technologies. It integrates three-phase input rectification and inverter functions into a single compact package. The design utilizes silicon-based IGBT4 and EC4 diode technologies to balance efficiency and ruggedness. The module is designed for industrial environments, offering standard housing dimensions compatible with common mounting systems.
Public confirmed substitute part numbers are not available in the provided datasheet.