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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP30R06KE3BPSA1 is an EconoPIM2 module integrating Trench/Fieldstop IGBT3 and Emitter Controlled3 diodes. It features a collector-emitter voltage of 600 V, with continuous DC collector currents of 30 A at TC=65°C and 37 A at TC=25°C. The total power dissipation is 125 W at TC=25°C. Collector-emitter saturation voltage ranges from 1.55 V to 2.00 V depending on temperature. Switching losses include turn-on energy (Eon) of 1.40 mJ to 1.80 mJ and turn-off energy (Eoff) of 1.00 mJ to 1.20 mJ at TVj=25°C to 150°C. Thermal resistance junction-to-case is 1.20 K/W per IGBT. The module includes an NTC thermistor with a rated resistance of 5.00 kΩ at 25°C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration and compliance status. Ensure that the component matches the required electrical ratings and thermal characteristics for the intended application before procurement.
Select this module based on the 600 V blocking capability and current requirements up to 37 A. Consider the thermal resistance values and maximum junction temperature limits when designing the heatsinking solution. Verify gate drive compatibility with the specified threshold voltages and internal gate resistance.
This component belongs to the FP series of IGBT modules manufactured by Infineon Technologies. It utilizes the EconoPIM2 package format, which combines multiple semiconductor chips into a single insulated module. The 'KE3' designation indicates the use of Trench/Fieldstop IGBT3 technology.
FP30R06KE3BOSA1