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The FP35R12KT4B11BPSA1 is an IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 and EmCon4 diode technology within the EconoPIM2 package. It features a collector-emitter voltage of 1200V and a continuous collector current of 35A. The device operates with a maximum junction temperature of 175°C and supports screw mounting. Key electrical parameters include a saturation voltage of 2.6V at 70A and a forward voltage of 3.2V for the integrated diode at 70A.
Verify the specific suffix B11BPSA1 against official datasheets to confirm pinout and terminal configuration. Ensure compatibility with existing gate drive requirements and thermal interface materials. Cross-reference part numbers with manufacturer documentation to avoid confusion with similar EconoPIM variants.
Select this module for applications requiring 1200V blocking capability and moderate current handling up to 35A. Consider the 175°C max junction temperature for high-temperature environments. Evaluate thermal resistance values in the datasheet to determine appropriate heatsinking solutions for the intended duty cycle.
This component belongs to Infineon's EconoPIM2 family, designed for power conversion applications. It combines advanced IGBT and diode technologies in a single module to reduce parasitic inductance and improve overall system efficiency compared to discrete solutions.
Direct replacements may include other Infineon EconoPIM2 modules with matching voltage and current ratings, such as the FP35R12KT4 series variants. Verify pin compatibility and thermal specifications before substitution.