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The FP35R12KT4B16BOSA1 is a three-phase inverter IGBT module from the EconoPIM™2 series by Infineon Technologies. It integrates Trench/Fieldstop IGBT4 and Emitter Controlled4 diodes. The module features a maximum collector-emitter voltage of 1200 V and a continuous DC collector current of 35 A at TC = 100°C. Total power dissipation is rated at 210 W at TC = 25°C. Key electrical parameters include a typical VCE(sat) of 1.85 V at Tvj = 25°C, an input capacitance (Cies) of 2.00 nF, and a gate charge (QG) of 0.27 µC. The device includes an NTC thermistor with a rated resistance of 5.00 kΩ at 25°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific ordering suffix variations that may affect pinout or internal configuration. Ensure storage conditions remain within the specified -40°C to 125°C range to maintain device integrity prior to installation.
Select this module for applications requiring a 1200 V rating and 35 A continuous current capability. Consider the 210 W total power dissipation limit when designing thermal management solutions. Verify that the operating junction temperature range of -40°C to 150°C aligns with system requirements. Evaluate the stray inductance of 35 nH for high-speed switching compatibility.
This component belongs to the FP35R12 family of IGBT modules. It utilizes the EconoPIM™2 package format, which is distinct from other Infineon packages like EasyPIM or EconoPACK. The 'T4' designation indicates the use of IGBT4 technology combined with EmCon4 diodes, differentiating it from earlier generations or alternative configurations within the same voltage and current class.
Direct substitutes within the same package and electrical specifications should be sought from the FP35R12KT4 series. Verify pin compatibility and thermal resistance values before substitution. Cross-referencing with updated Infineon product portfolios is recommended as older variants may be discontinued.