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The FP35R12KT4BOSA1 is an EconoPIM™2 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled4 diode technology. It provides a three-phase inverter configuration with a 1200 V collector-emitter voltage rating and a continuous DC collector current of 35 A at TC = 100°C. The maximum repetitive peak collector current reaches 70 A for 1 ms pulses. Total power dissipation is rated at 210 W at TC = 25°C. The module includes an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C. Operating junction temperature ranges from -40°C to 150°C, with a maximum junction temperature of 175°C.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm RoHS compliance status and check for specific ordering suffixes that may alter pinout or electrical characteristics. Request original datasheets and material content data sheets prior to finalizing procurement orders.
Evaluate thermal resistance values against system cooling requirements. Ensure gate drive voltages remain within the specified ±20 V limit. Verify short-circuit withstand capability matches application fault protection timing. Check stray inductance limits for switching speed optimization.
This component belongs to the FP35R12 series of Infineon Technologies. It utilizes the EconoPIM2 package design. The module integrates multiple semiconductor chips into a single insulated unit for compact power conversion designs.
FP35R12KT4_B16BOSA1
The maximum repetitive peak collector current (ICRM) is 70 A for a pulse duration of 1 ms.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.
The typical forward voltage (VF) of the rectifier diode is 0.95 V at Tvj = 150°C and IF = 35 A.