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The FP35R12KT4PBPSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled diodes with pre-applied thermal interface material. It features a three-phase input rectifier configuration. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, continuous DC collector current (IC nom) of 35 A at TH = 95°C, and repetitive peak collector current (ICRM) of 70 A. The typical VCEsat is 1.85 V at Tvj = 25°C for IC = 35 A. The integrated NTC thermistor has a rated resistance (R25) of 5 kΩ. The module utilizes solder contact technology with an isolated copper baseplate.
Verify the specific PBPSA1 suffix against official Infineon documentation to confirm functional equivalence or distinct characteristics compared to the standard FP35R12KT4P. Ensure compliance with RoHS standards and check for any specific storage requirements related to the pre-applied thermal interface material as outlined in application note AN2012-07.
Select this module for applications requiring a compact three-phase rectifier solution with integrated braking chopper capabilities. Consider the 1200 V rating and 35 A continuous current capacity relative to the system's thermal management design. Verify that the operating junction temperature range of -40°C to 150°C aligns with the environmental conditions.
This component belongs to the Infineon EconoPIM™2 family, designed for industrial applications. It combines IGBT switches and diodes into a single package to reduce parasitic inductance and simplify layout. The T4 generation indicates the use of Trench/Fieldstop IGBT technology, offering optimized switching losses and conduction performance.
FP35R12KT4P
The maximum repetitive peak collector current (ICRM) is 70 A for a pulse duration of 1 ms.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.
The typical forward voltage (VF) of the rectifier diode is 0.95 V at Tvj = 150°C and IF = 35 A.