FP35R12N2T4B86BPSA1

$52.22

Description：LOW POWER ECONO
Series：-

SKU:da3086d6e9f2 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：LOW POWER ECONO
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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FP35R12N2T4B86BPSA1

Overview

The FP35R12N2T4B86BPSA1 is a silicon IGBT module from Infineon Technologies, designed for three-phase inverter configurations. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 35 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.85 V and a gate-emitter leakage current of 100 nA. Operating within a temperature range of -40°C to +150°C, it utilizes TrenchStop technology.

Feature Summary

Integrated three-phase inverter topology
Utilizes TrenchStop IGBT technology
Silicon-based semiconductor construction

Applications

Three-phase inverter circuits
Industrial power conversion systems
Motor drive applications

Procurement Notes

Verify the specific suffix B86 against official Infineon documentation to confirm pinout and thermal interface compatibility. Ensure that the ordering information matches the exact part number required for the target application design. Cross-reference datasheet revisions to validate electrical characteristics before final procurement decisions are made.

Selection Notes

Select this component when a 1.2 kV rating and 35 A current capacity are required for three-phase inverter topologies. Consider the operating temperature range and saturation voltage characteristics for thermal management planning. Confirm that the package type and mounting requirements align with the system's mechanical constraints and PCB layout specifications.

Part Context

This module belongs to the IGBT silicon modules category produced by Infineon Technologies. It is part of a series utilizing TrenchStop technology, which is engineered for efficient power switching. The product falls under discrete and power modules, serving as a critical component in medium-power electronic conversion systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative models through official Infineon cross-reference tools or direct technical consultation.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.