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The FP35R12N2T7B67BPSA1 is an EconoPIM2 IGBT module from Infineon Technologies, integrating TRENCHSTOPIGBT7 technology and emitter-controlled diodes. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 35 A at 25°C. The saturation voltage is specified at 1.78 V, with a gate-emitter leakage current of 100 nA. Operating temperatures range from -40°C to +150°C. The component utilizes silicon technology and employs press-fit installation for secure mounting.
Verify the specific suffix B67 against official Infineon documentation to confirm exact electrical characteristics and mechanical dimensions. Ensure compatibility with press-fit assembly processes during integration. Cross-reference datasheet parameters for thermal management requirements to validate operational limits within the target application environment.
Select this module for high-voltage three-phase applications requiring robust switching capabilities. The 1.2 kV rating suits industrial environments, while the 35 A current capacity supports moderate power loads. Consider the 150°C maximum operating temperature for thermal design constraints and verify that the press-fit mounting style aligns with the PCB or chassis design specifications.
This component belongs to the EconoPIM2 series, designed for power integrated modules. It utilizes TRENCHSTOPIGBT7 technology, representing a specific generation of insulated-gate bipolar transistors. The part number indicates a PIM configuration, distinguishing it from standard six-pack modules by integrating multiple devices into a single unit for simplified system design.
FP35R12N2T7BPSA2 is listed as an alias in distributor data, though functional equivalence requires verification against official Infineon substitution guidelines.