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The FP35R12N2T7BPSA2 is a three-phase inverter IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (ICDC) of 35 A at a case temperature of 105 °C. The module incorporates an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C for thermal monitoring. Electrical characteristics include a typical collector-emitter saturation voltage (VCEsat) of 1.60 V at 25 °C and a forward voltage (VF) of 1.72 V for the inverter diode. The package utilizes a copper base plate and Al2O3 substrate, providing high power cycling capability.
Verify component authenticity by cross-referencing the module label code against official Infineon documentation standards. Ensure the ordering suffix matches the specific variant required. Confirm compliance with industrial qualification standards such as IEC 60747 prior to integration into final designs.
Select this module for applications requiring 1200 V blocking capability and up to 35 A continuous current. Consider the thermal resistance values when designing heatsinking solutions. Verify that the gate drive requirements align with the specified threshold voltages and internal gate resistor characteristics for optimal switching performance.
This component belongs to the EconoPIM™2 series of power modules. It represents part of Infineon's TRENCHSTOP™ IGBT7 product family, which is engineered for industrial applications. The module integrates multiple semiconductor chips into a single compact package to facilitate efficient three-phase power conversion systems.
FP35R12N2T7BPSA1