SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP35R12W2T4B11 is a PressFIT IGBT module from Infineon's EasyPIM™2B series, utilizing Trench/Fieldstop IGBT4 technology. It integrates three-phase inverter switches, a rectifier bridge, and a brake chopper. Key electrical parameters include a collector-emitter voltage of 1200 V, continuous DC collector current of 35 A at 100°C, and total power dissipation of 215 W. The module features an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C. Operating junction temperature ranges from -40°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm terminal configuration and insulation class. Ensure that the procurement channel provides valid traceability certificates. Confirm compliance with RoHS directives and material content data sheets prior to finalizing orders.
Evaluate the module based on the required voltage rating of 1200 V and current capacity of 35 A. Consider the thermal resistance values for both junction-to-case and case-to-heatsink interfaces when designing the cooling system. Verify that the gate drive circuitry supports the specified threshold voltages and peak currents.
This component belongs to the EasyPIM™2B family, which combines power semiconductors with control circuits. The B11 suffix typically denotes specific terminal arrangements or insulation properties within this product line. It represents a compact solution for high-power density applications requiring integrated protection and monitoring features.
Direct replacements must match the 1200V/35A rating and EasyPIM2B footprint. Verify compatibility of the internal IGBT4 technology characteristics with existing gate driver designs. Check if alternative modules offer similar stray inductance levels to maintain switching performance.