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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP40R12KE3GBOSA1 is an EconoPIM™3 IGBT module featuring Trench/Fieldstop IGBT3 technology and an Emitter Controlled 3 diode. It includes an integrated NTC temperature sensor and a copper base plate. The inverter IGBT offers a collector-emitter voltage of 1200 V, with continuous DC collector currents of 40 A at TC=80°C and 55 A at TC=25°C. The repetitive peak collector current reaches 80 A. The rectifier diode supports a maximum RMS forward current of 60 A per chip and a surge forward current up to 450 A. Total power dissipation is rated at 210 W.
Verify the component authenticity by checking the UL approval number E83335 and confirming the datasheet revision matches version 3.0 or later. Ensure the ordering suffix aligns with specific RoHS compliance requirements. Cross-reference the barcode code digits against Infineon's serial number format to validate production details before finalizing procurement orders.
Select this module for designs requiring robust thermal management and high short-circuit withstand capability. The internal gate resistor is specified at 6.0 Ω. For operation with Vge = 0V/+15V, external gate resistors should be set to a minimum of 27 Ω. Consider the stray inductance of 60 nH when designing PCB layouts to minimize voltage spikes during switching transitions.
This component belongs to the EconoPIM™3 series from Infineon Technologies. It utilizes Trench/Fieldstop IGBT3 technology paired with an Emitter Controlled 3 diode. The module integrates an NTC sensor and features a copper base plate. It is designed for industrial applications requiring high reliability and efficient thermal performance within a standard housing.
Public confirmed substitute part numbers are not available in the provided documentation.