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The FP50R07N2E4_B11 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodes with PressFIT technology. It features a collector-emitter voltage of 650 V, a nominal continuous DC collector current of 50 A at TC=80°C, and a repetitive peak collector current of 100 A. The typical saturation voltage is 1.55 V at Tvj=25°C. Operating junction temperature ranges from -40°C to 150°C. The module includes an integrated NTC thermistor rated at 5 kΩ at 25°C.
Verify the specific ordering suffix B11 against official Infineon documentation to confirm the inclusion of PressFIT contacts and the integrated NTC thermistor. Ensure that the procurement channel provides valid traceability data matching the module serial number and datecode printed on the component label.
Select this module for designs requiring high blocking voltage and moderate current handling within a compact form factor. Consider the thermal resistance values when designing heatsink interfaces. Verify that the gate drive circuitry supports the specified threshold voltage and internal gate resistor characteristics for optimal switching performance.
This component belongs to the EconoPIM™2 series, designed for three-phase power conversion. It combines rectifier, inverter, and brake chopper functions into a single package. The use of IGBT4 technology aims to balance switching losses and conduction drops for industrial frequency applications.
Direct replacements must match the 650V rating, 50A nominal current, and EconoPIM™2 footprint. Verify compatibility of PressFIT termination requirements and NTC specifications if thermal monitoring is utilized in the target system design.
The module can withstand short-circuit conditions for up to 10 µs.
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.
Yes, it features an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C.