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The FP50R07N2E4BPSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodes with an NTC sensor. It features a collector-emitter voltage (VCES) of 650 V, a continuous DC collector current (IC nom) of 50 A at TC=80°C, and a repetitive peak collector current (ICRM) of 100 A. The typical collector-emitter saturation voltage (VCEsat) is 1.55 V at Tvj=25°C. The module includes an integrated rectifier diode rated for 1600 V reverse voltage and 80 A RMS forward current per chip. Thermal resistance from junction to case is 0.800 K/W for the IGBT and 1.20 K/W for the inverter diode.
Verify the exact ordering suffix against official Infineon documentation to confirm specific manufacturing lot or packaging variations. Ensure that any requested substitutions maintain identical electrical ratings and mechanical dimensions. Cross-reference datasheet version numbers to guarantee compatibility with existing design parameters and application notes.
Select this component for applications requiring high short-circuit robustness and positive temperature coefficients. Consider the 650 V rating and 50 A continuous current capacity when designing motor drive or rectifier systems. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended operating conditions.
This part belongs to the Infineon EconoPIM™2 series, which combines power modules with control electronics. The FP50R07N2E4 utilizes Trench/Fieldstop IGBT4 technology, offering improved switching characteristics compared to previous generations. The BPSA1 suffix typically denotes specific tape-and-reel packaging or handling requirements within the Infineon product line.
FP50R07N2E4
The module supports a short-circuit time of up to 10 µs.
The rated resistance (R25) of the NTC thermistor is 5.00 kΩ at 25°C.
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.