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The FP50R12W2T7PBPSA1 is a silicon-based IGBT module manufactured by Infineon Technologies, belonging to the EasyPIM family. It features a PIM configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 50 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 100 nA. It operates within a temperature range of -40°C to +175°C, utilizing through-hole mounting in a tray package.
Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure ordering quantities align with factory packaging constraints to avoid partial reel issues.
Select this component when a pre-configured three-phase inverter bridge is required. The 1.2 kV rating suits medium-voltage applications. Evaluate thermal management requirements based on the 50 A continuous current rating and 1.5 V saturation voltage for efficient heat dissipation design.
This part belongs to Infineon's EasyPIM series, which integrates IGBTs and diodes into a single module. The 'W' designation typically indicates specific internal circuit topology variations within the EasyPIM lineup compared to standard configurations.
Direct substitutes include FP50R12W2T7BPSA1 and FP50R12N2T7PBPSA1. Verify electrical parameters and pin compatibility before substitution.