SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP75R07N2E4B11BPSA1 is an EconoPIM™2 IGBT module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT technology. It features a 650V collector-emitter voltage (VCES) and a continuous DC collector current (IC nom) of 75A at TC=70°C, with a repetitive peak current (ICRM) of 150A. The typical VCEsat is 1.55V at Tvj=25°C and 75A. The integrated NTC thermistor has a rated resistance (R25) of 5.0kΩ. Maximum junction temperature for the inverter and brake-chopper sections is 175°C, while the rectifier section is limited to 150°C.
Verify component authenticity by checking the module label code against Infineon documentation standards. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compatibility with PressFIT assembly processes as detailed in official application notes. Validate isolation test voltage requirements before integration into the final system design.
Select this module for applications requiring high blocking voltage and robust short-circuit performance. Consider the maximum junction temperature limits when designing thermal management systems, particularly for the rectifier section which operates at a lower limit than the inverter. Verify that the gate drive circuitry supports the specified threshold voltages and charge requirements for optimal switching characteristics.
This component belongs to the EconoPIM™2 series from Infineon Technologies. It utilizes Trench/Fieldstop IGBT4 technology combined with Emitter Controlled 4 diodes. The module is designed for industrial power conversion applications, offering a compact solution with integrated thermal sensing and isolated base plate features for reliable operation in demanding environments.
FP75R07N2E4_B11
The maximum junction temperature for the rectifier section is 150°C.
The typical forward voltage (VF) of the rectifier diode is 1.00V at Tvj=150°C and IF=50A.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.