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Product Detailed Parameters
- Description：FP75R07 - IGBT MODULE
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FP75R07N2E4BOSA1 is a Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode module in the EconoPIM™2 package. It features an isolated copper baseplate with integrated NTC thermistor. Key electrical parameters include a collector-emitter voltage (VCES) of 650 V, continuous DC collector current (IC nom) of 75 A at TC=70°C, and repetitive peak collector current (ICRM) of 150 A. The typical saturation voltage (VCEsat) is 1.55 V at Tvj=25°C. Switching losses per pulse at IC=75A, VCE=300V are typically 0.385 mJ for turn-on and 3.35 mJ for turn-off at Tvj=25°C. The module has a junction-to-case thermal resistance of 0.600 K/W per IGBT.
Feature Summary
- Incorporates Trench/Fieldstop IGBT4 technology for high short-circuit capability and positive temperature coefficient of VCEsat.
- Features an emitter-controlled diode optimized for inverter applications with low reverse recovery charge.
- Includes an integrated NTC thermistor for precise internal temperature monitoring.
- Utilizes solder contact technology on an insulated copper baseplate for reliable thermal management.
Applications
- Motor drives
- Three-phase inverters
- Rectifier circuits
Procurement Notes
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm exact manufacturing lot or packaging specifications. Ensure compatibility with existing gate drive requirements and thermal interface materials. Confirm that the component meets all relevant safety standards required for the intended industrial application environment.
Selection Notes
Select this module for applications requiring 650V blocking capability and up to 75A continuous current. Consider the 0.600 K/W thermal resistance for heatsink design. Evaluate switching losses at operating frequencies to ensure efficiency targets are met. Verify that the gate resistor values align with the specified test conditions for optimal performance.
Part Context
This component belongs to the EconoPIM™2 series from Infineon Technologies. It utilizes IGBT4 technology combined with emitter-controlled diodes. The module is designed for industrial power electronics, offering a compact solution with integrated thermal sensing. It is part of a broader family of modules sharing similar mechanical dimensions but varying electrical ratings.
Replacement Considerations
Public confirmed substitute part numbers: None identified in verified sources.
FAQ
What is the maximum short-circuit withstand time?
The module can withstand short-circuit currents for a duration of tP ≤ 10 µs.
What is the rated resistance of the integrated NTC thermistor?
The rated resistance (R25) at TNTC = 25°C is 5.00 kΩ.
What is the isolation test voltage?
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.
