FP75R12KT4PBPSA1

Overview

The FP75R12KT4PBPSA1 is a three-phase PIM IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 75 A at TH = 75°C. The repetitive peak collector current (ICRM) reaches 150 A. The typical collector-emitter saturation voltage (VCEsat) is 1.85 V at Tvj = 25°C. The module includes an integrated NTC thermistor with a rated resistance (R25) of 5.0 kΩ. It operates within a junction temperature range of -40°C to 150°C.

Feature Summary

• Integrates fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode for low switching losses
• Includes pre-applied thermal interface material for simplified assembly
• Features an integrated NTC temperature sensor for reliable thermal monitoring
• Provides high power and thermal cycling capability with a copper baseplate

Applications

• Auxiliary inverters
• Motor drives
• Servo drives

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to ensure correct component specifications. Confirm RoHS compliance status and check for any specific handling requirements related to the pre-applied thermal interface material during storage and transport.

Selection Notes

Select this module for applications requiring robust three-phase inverter configurations with integrated rectifier and brake-chopper stages. Ensure the gate drive circuitry supports the specified internal gate resistor values and peak voltages. Verify that the cooling system can maintain the baseplate temperature below the maximum operational limit.

Part Context

This component belongs to the EconoPIM3 series by Infineon Technologies. It combines multiple semiconductor functions into a single compact package, designed for industrial power conversion systems. The Trenchstop IGBT4 technology provides a balance between conduction and switching performance.

Replacement Considerations

FP75R12KT4BOSA1