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The FP75R12N3T4B80BPSA1 is a silicon IGBT module from Infineon Technologies, designed for three-phase inverter configurations. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.85 V. It utilizes Trench/Fieldstop IGBT4 technology within the EconoPIM PressFIT package series. The module supports an operating temperature range from -40°C to +150°C.
Verify the specific suffix B80 against official Infineon documentation to confirm exact electrical tolerances and marking details. Ensure compatibility with PressFIT mounting requirements. Cross-reference the Mouser part number 726-FP75R12N3T4B80BPSA1 with manufacturer datasheets to validate availability and technical specifications before procurement.
Select this module for applications requiring robust three-phase inversion with high voltage tolerance. The IGBT4 technology offers improved switching characteristics compared to previous generations. Consider the EconoPIM form factor for space-constrained designs. Verify thermal resistance parameters against system cooling capabilities to ensure reliable operation within the specified temperature range.
This component belongs to Infineon's EconoPIM PressFIT series, which combines IGBTs and diodes in a single module. The T4 designation indicates the use of Trench/Fieldstop technology, providing a balance between low conduction losses and fast switching speeds. It is part of the broader family of industrial-grade power modules designed for demanding environments.
FP75R12KT4PB11BPSA1 shares similar voltage and current ratings but may differ in specific internal configuration or packaging nuances. FS75R12KT4BPSA2 is a sixpack variant with different pinout and topology. Always consult official substitution guides to verify functional equivalence.