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The FP75R17N3E4B11BPSA1 is a silicon-based IGBT module from Infineon Technologies, belonging to the EconoPIM™ 3 series. It features a three-phase inverter configuration with trench field-stop technology. The device supports a maximum collector-emitter voltage of 1700 V and a continuous collector current of 150 A at 25°C. The typical saturation voltage is 2.3 V at 15 V gate drive and 75 A. Operating temperature ranges from -40°C to +150°C. It includes an integrated NTC thermistor for thermal monitoring and utilizes baseplate mounting.
Verify the specific suffix B11 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing gate driver circuits regarding voltage thresholds. Confirm RoHS compliance status through the manufacturer's certificate of conformity before integration into regulated assemblies.
Select this component when a 1700 V rating and 150 A current capacity are required for three-phase topologies. The EconoPIM™ 3 package offers a compact footprint compared to larger discrete solutions. Consider the positive temperature coefficient characteristics inherent to the Trenchstop technology for reliable parallel operation if higher currents are needed.
This module is part of Infineon's EconoPIM™ 3 family, designed for high-power density applications. It combines rectifier and inverter functions in a single package. The series is engineered for industrial environments requiring high reliability and efficient thermal management.
Direct substitutes within the same voltage and current class include other EconoPIM™ 3 variants such as FP75R17N3E4_B11. Verify pinout compatibility and thermal resistance values before swapping. Consult Infineon's cross-reference tools for updated alternatives if discontinuation occurs.