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FQA5N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 5.8A TO3P. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQA5N90
- Description：MOSFET N-CH 900V 5.8A TO3P
- Series：QFET®
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：5.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.3Ohm @ 2.9A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1550 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：185W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
Single FETs, MOSFETs datasheet and documents for FQA5N90
Single FETs, MOSFETs Overview
The FQA5N90 is a 900V N-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a TO-3P package with continuous drain current of 5.8A at 25°C and pulsed drain current of 23.2A. The device has a maximum on-state resistance of 2.3Ω at VGS=10V and typical gate charge of 31nC. Power dissipation reaches 185W at 25°C case temperature, with an operating junction temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
- Capable of withstanding high energy pulses in avalanche and commutation modes.
- Features improved dv/dt capability and fast switching characteristics.
Single FETs, MOSFETs Applications
- High efficiency switch mode power supplies
- Inductive load switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer origin as Fairchild Semiconductor International or successor entities like onsemi. Confirm the specific revision level matches the required datasheet version. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability. Check for any obsolescence notices regarding this specific part number.
Single FETs, MOSFETs Selection Notes
Select based on the 900V breakdown voltage requirement and 5.8A continuous current rating. Consider the thermal resistance of 0.68°C/W for heat sink design. Evaluate the 2.3Ω maximum RDS(on) for conduction loss calculations. Verify compatibility with TO-3P mounting hardware and lead soldering temperatures up to 300°C.
Single FETs, MOSFETs Part Context
This component belongs to the FQA series of N-Channel QFET MOSFETs. It shares similar technological foundations with other devices in the family designed for high-voltage applications. The TO-3P package provides robust mechanical stability and efficient thermal transfer capabilities compared to smaller surface mount alternatives.
Single FETs, MOSFETs Replacement Considerations
Check for direct equivalents such as FQB5N90 or SSH5N90A which share similar voltage and current ratings. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement device meets the same avalanche energy and dv/dt specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
