FQA7N90

Description：MOSFET N-CH 900V 7.4A TO3P
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:ecc153d347ba Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQA7N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 7.4A TO3P. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQA7N90

Description：MOSFET N-CH 900V 7.4A TO3P
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.55Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2280 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：198W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P
Package / Case：TO-3P-3, SC-65-3

Single FETs, MOSFETs datasheet and documents for FQA7N90

FQA7N90

Single FETs, MOSFETs Overview

The FQA7N90 is a 900V N-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a maximum continuous drain current of 7.4A at 25°C and a typical on-state resistance of 1.55Ω at VGS = 10V. The device includes avalanche testing, low gate charge (typical 45nC), and fast switching capabilities. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-3P package.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
Capable of withstanding high energy pulses in both avalanche and commutation modes.
Features improved dv/dt capability and low reverse transfer capacitance.

Single FETs, MOSFETs Applications

High efficiency switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer origin, as the component was originally produced by Fairchild Semiconductor prior to its acquisition by onsemi. Confirm that the datasheet revision matches the required specifications. Ensure the TO-3P package dimensions align with the target thermal management design. Validate compliance requirements against the original Fairchild documentation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability combined with moderate current handling. The TO-3P package facilitates effective heat dissipation through direct mounting to a heatsink. Consider the thermal resistance values when designing the cooling system to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This device belongs to the QFET series of power MOSFETs. It represents an evolution of planar DMOS technology designed to balance conduction losses with switching speed. The TO-3P form factor provides robust mechanical stability and thermal conductivity suitable for industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

Check for equivalents such as the FQA9N90C or FQA11N90, which share similar voltage ratings but differ in current capacity and on-resistance. Verify pinout compatibility and thermal characteristics before substitution.