Single FETs, MOSFETs FQB12N60TM_AM002 product image

FQB12N60TM_AM002

$0.91
  • Description:MOSFET N-CH 600V 10.5A D2PAK
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:6214bd63db54 Category: Brand:

  
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FQB12N60TM_AM002 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 600V 10.5A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQB12N60TM_AM002

  • Description:MOSFET N-CH 600V 10.5A D2PAK
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:700mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.13W (Ta), 180W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for FQB12N60TM_AM002

FQB12N60TM_AM002

Single FETs, MOSFETs Overview

The FQB12N60TM_AM002 is a 600V N-Channel enhancement mode power MOSFET manufactured by onsemi. It utilizes planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. The device features a maximum continuous drain current of 10.5A at 25°C case temperature, with a typical static drain-source on-resistance of 0.7Ω at VGS=10V. It includes an integrated body diode rated for 10.5A continuous forward current and supports single pulsed avalanche energy up to 790mJ.

Single FETs, MOSFETs Feature Summary

  • Planar stripe DMOS technology tailored for low on-state resistance and high efficiency switch mode power supply applications
  • High avalanche ruggedness with 100% avalanche testing and improved dv/dt capability
  • Fast switching characteristics supported by low gate charge and reverse transfer capacitance

Single FETs, MOSFETs Applications

  • High efficiency switch mode power supplies
  • General purpose power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix AM002 against official manufacturer documentation to confirm packaging configuration and marking details. Ensure compatibility with D2-Pak footprint requirements during PCB layout. Confirm that the component meets all relevant safety and environmental standards specified in the final datasheet before integration into production designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust 600V blocking capability and moderate current handling up to 10.5A. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate the gate charge specifications against driver capabilities to optimize switching speed and minimize switching losses in the target circuit topology.

Single FETs, MOSFETs Part Context

This part belongs to the FQB/FQI series of 600V N-Channel MOSFETs originally developed by Fairchild Semiconductor, now part of onsemi. The FQB variant specifically denotes the D2-Pak surface mount package, while the FQI series corresponds to the I2-Pak through-hole package. Both share identical electrical characteristics and are designed for general-purpose power switching.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include the FQI12N60 (I2-Pak package) which shares identical electrical specifications. Other compatible parts within the same voltage and current class may be considered if package form factor differences are acceptable.

FQB12N60TM_AM002FQB12N60TM_AM002
$0.91
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