FQB12P10TM

Description：MOSFET P-CH 100V 11.5A D2PAK
Series：QFET®
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:54192d136a3a Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQB12P10TM is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 100V 11.5A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQB12P10TM

Description：MOSFET P-CH 100V 11.5A D2PAK
Series：QFET®
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：290mOhm @ 5.75A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.75W (Ta), 75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for FQB12P10TM

FQB12P10TM

Single FETs, MOSFETs Overview

The FQB12P10TM is a P-Channel enhancement mode power MOSFET manufactured by onsemi (formerly Fairchild Semiconductor). It utilizes planar stripe DMOS technology to achieve low on-state resistance and superior switching performance. The device features a -100V drain-source voltage rating, a continuous drain current of -11.5A at 25°C case temperature, and a maximum on-resistance of 0.29Ω at VGS = -10V. It includes an integrated body diode with fast recovery characteristics and supports a maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and high energy pulse withstand capability.
Features low gate charge and reverse transfer capacitance to enable fast switching performance.
Includes an integrated body diode with improved dv/dt capability and fast recovery time.
Rated for 100% avalanche testing to ensure reliability under inductive load conditions.

Single FETs, MOSFETs Applications

High efficiency switching DC/DC converters
Audio amplifier circuits
DC motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TM' against official documentation to confirm package type and lead-free status. Confirm that the manufacturer designation aligns with current onsemi product lines, as historical Fairchild data may require cross-referencing with updated datasheets. Ensure component authenticity through authorized distribution channels.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust P-Channel switching with high avalanche energy tolerance. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the gate drive voltage requirements match the specified threshold and on-resistance test conditions for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family of power MOSFETs designed for general-purpose power switching. It shares technological lineage with other devices in the series, emphasizing low RDS(on) and fast switching speeds. The D2PAK package provides efficient thermal management for surface-mount applications.

Single FETs, MOSFETs Replacement Considerations

The FQI12P10 is a pin-compatible alternative housed in the I2PAK package. Verify package dimensions and thermal characteristics before substitution. Other P-Channel MOSFETs with similar voltage and current ratings may be considered if electrical parameters align with design requirements.