FQB3P20TM

Single FETs, MOSFETs Overview

The FQB3P20TM is a P-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a -200V drain-source voltage rating and a continuous drain current of -2.8A at 25°C case temperature. The device exhibits a maximum on-resistance of 2.7Ω at VGS = -10V. Key electrical parameters include a typical gate charge of 6.0nC, a reverse transfer capacitance of 7.5pF, and a single pulsed avalanche energy capability of 150mJ. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
• Capable of withstanding high energy pulses in both avalanche and commutation modes.
• Features low gate charge and low reverse transfer capacitance for fast switching applications.
• Includes improved dv/dt capability and is subjected to 100% avalanche testing.

Single FETs, MOSFETs Applications

• High efficiency switching DC/DC converters
• Switch mode power supplies
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TM' against official manufacturer documentation to confirm exact packaging or tape-and-reel specifications. Ensure the component source aligns with Fairchild Semiconductor or authorized successor entities like onsemi. Confirm RoHS compliance status and manufacturing origin prior to procurement to meet project requirements.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a -200V P-Channel MOSFET with moderate current handling capabilities. Consider the thermal resistance characteristics when designing heat dissipation solutions. Evaluate the gate charge requirements against available driver circuitry to ensure optimal switching speeds and minimize drive losses.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family produced by Fairchild Semiconductor International. The FQB3P20 variant utilizes the D2-PAK package, while the FQI3P20 counterpart uses the I2-PAK configuration. Both share identical electrical specifications but differ in physical mounting styles.

Single FETs, MOSFETs Replacement Considerations

The FQI3P20 serves as a direct functional equivalent utilizing an alternative package style. Verify pinout compatibility and thermal interface dimensions before substituting between the D2-PAK and I2-PAK variants.

Single FETs, MOSFETs FAQ

What is the maximum single pulsed avalanche energy rating?

The device is rated for a single pulsed avalanche energy of 150 mJ.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises, following a positive temperature coefficient characteristic typical of DMOS technology.