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FQB7N65CTM is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 650V 7A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQB7N65CTM
- Description：MOSFET N-CH 650V 7A D2PAK
- Series：QFET®
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1245 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：173W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for FQB7N65CTM
Single FETs, MOSFETs Overview
The FQB7N65CTM is a single N-Channel MOSFET from the Fairchild Semiconductor C-Series, utilizing Advanced Q-FET technology. It features a 650V drain-source voltage rating and a continuous drain current of 7A at case temperature. The device offers a maximum on-resistance of 1.4 ohms and a gate charge of 36 nC. Packaged in a surface-mount TO-263 (D2PAK) format, it supports power dissipation up to 173W at case temperature and operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Advanced Q-FET technology for optimized switching performance
- High voltage capability with 650V breakdown rating
- Surface-mount TO-263 package design for thermal efficiency
Single FETs, MOSFETs Applications
- Offline flyback converters
- DC-DC converter circuits
- Load switch applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm RoHS compliance and specific lot markings against official datasheets. Request full test reports to ensure electrical parameters meet original specifications before integration into production lines.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage switching applications requiring moderate current handling in surface-mount designs. Evaluate thermal management requirements carefully given the TO-263 package constraints. Compare total gate charge and on-resistance values against alternative devices to ensure compatibility with existing drive circuitry and efficiency targets.
Single FETs, MOSFETs Part Context
This part belongs to the FQB7N65C series of N-Channel MOSFETs manufactured by Fairchild Semiconductor, now part of onsemi. The C-Series utilizes proprietary trench gate technology to achieve low on-resistance and fast switching speeds. The TO-263 variant provides a robust solution for power conversion systems where space savings are critical compared to through-hole alternatives.
Single FETs, MOSFETs Replacement Considerations
Check for equivalents such as FQPF7N65CYDTU or FQP7N65C. Verify pinout compatibility and thermal characteristics when substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
