FQB8N90CTM

Single FETs, MOSFETs Overview

The FQB8N90CTM is a high-voltage N-channel Power MOSFET manufactured by onsemi. It features an 8-ampere continuous drain current and a 900-volt drain-to-source breakdown voltage. The device utilizes the Superjunction technology to achieve low on-state resistance, specifically 2.5 ohms at a gate-source voltage of 10 volts. It is housed in a TO-247AD insulated package designed for robust thermal performance and electrical isolation. This component is engineered for demanding power conversion applications requiring high efficiency and reliable operation under extreme voltage conditions.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 900V breakdown rating
• Low on-state resistance via Superjunction technology
• Thermally efficient TO-247AD insulated packaging

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Industrial motor control systems
• Uninterruptible power supply (UPS) circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing this component. Confirm that the TO-247AD package insulation specifications align with your safety isolation requirements. Ensure compatibility with your thermal management design, as the device dissipates significant heat during operation. Cross-reference the manufacturer's latest documentation for any updates regarding pinout or absolute maximum ratings before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage blocking capabilities combined with moderate current handling. The Superjunction architecture offers superior figure-of-merit compared to traditional planar MOSFETs at this voltage level. Consider the thermal resistance of the TO-247AD package when determining heatsink requirements. Evaluate the gate charge characteristics against your driver capabilities to optimize switching losses in high-frequency applications.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's high-voltage MOSFET portfolio, which includes various packages and voltage ratings. The FQB series typically denotes ruggedized devices suitable for industrial environments. The TO-247AD package provides a standard footprint for through-hole mounting, facilitating integration into existing board layouts designed for similar form factors. It serves as a critical switching element in power electronics where reliability under high stress is paramount.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify that any replacement maintains the 900V rating and comparable Rds(on) values. Ensure the alternative package matches the thermal and mechanical constraints of the original design.