FQD7P20TM_F080

Single FETs, MOSFETs Overview

The FQD7P20TM_F080 is a P-Channel enhancement mode power MOSFET manufactured by onsemi. It utilizes proprietary planar stripe and DMOS technology to achieve a drain-source voltage (Vdss) of -200 V and a continuous drain current (Id) of -5.7 A at case temperature. The device features a maximum on-resistance (Rds(on)) of 690 mΩ. It is housed in a surface-mount TO-252AA (DPAK) package, designed for thermal efficiency with a power dissipation rating of 2.5 W at ambient temperature and 55 W at case temperature.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced planar stripe and DMOS technology for enhanced performance
• Designed for high-voltage P-Channel switching applications
• Surface-mount construction optimized for thermal management

Single FETs, MOSFETs Applications

• Power management circuits requiring high-voltage P-Channel switching
• DC-DC converter topologies utilizing P-Channel input stages
• Load switch applications in industrial or automotive systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix _F080 against official onsemi documentation to confirm tape-and-reel packaging specifications and exact marking codes. Ensure compatibility with standard DPAK footprint designs. Confirm RoHS compliance status through the manufacturer's material composition declaration for this specific lot code.

Single FETs, MOSFETs Selection Notes

Select this component when a -200 V rated P-Channel MOSFET is required. The 690 mΩ Rds(on) offers a balance between conduction loss and cost. Verify that the TO-252AA package fits the PCB thermal design constraints. Compare against alternative -200 V devices if lower on-resistance is critical for the specific application load.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's QFET series of power MOSFETs. The QFET line focuses on providing reliable discrete semiconductor solutions using established planar technologies. These components are categorized under discrete devices and power modules, serving as fundamental building blocks for power conversion and control circuits.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same -200 V P-Channel family. Verify that substitute parts meet or exceed the -5.7 A current rating and 690 mΩ resistance limits. Ensure the replacement package matches the TO-252AA form factor for board retention.