FQD8P10TM_F080

Description：MOSFET P-CH 100V 6.6A DPAK
Series：QFET®
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:7dd795af1b95 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQD8P10TM_F080 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 100V 6.6A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQD8P10TM_F080

Description：MOSFET P-CH 100V 6.6A DPAK
Series：QFET®
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：530mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 44W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for FQD8P10TM_F080

FQD8P10TM_F080

Single FETs, MOSFETs Overview

The FQD8P10TM-F085 is a P-Channel enhancement mode power MOSFET utilizing onsemi's proprietary planar stripe DMOS technology. It features a -100V drain-source voltage rating and optimized low on-resistance for efficient switching. The device supports continuous currents of -6.6A at 25°C case temperature, with pulse capabilities reaching -26.4A. Key electrical characteristics include a typical gate charge of 12nC and a reverse transfer capacitance of 30pF, facilitating rapid switching speeds. It is designed to withstand high energy pulses in avalanche and commutation modes.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology for optimized performance
Capable of withstanding high energy pulses in avalanche and commutation modes
Features improved dv/dt capability for robust operation under voltage changes
Includes 100% avalanche testing to ensure reliability

Single FETs, MOSFETs Applications

Audio amplifiers
Efficient switching DC/DC converters
DC motor control

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix against official documentation, as the provided model contains a discrepancy (F080 vs. documented F085). Confirm AEC-Q101 automotive qualification status if required for your specific application environment. Ensure thermal management aligns with the specified power dissipation ratings at relevant case temperatures to maintain device integrity.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring high efficiency and fast switching. Consider the -100V rating and low on-resistance for power loss reduction. Evaluate thermal constraints based on the specified continuous and pulsed current limits. Verify compatibility with drive voltages given the gate charge specifications.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's power MOSFET portfolio, specifically leveraging advanced DMOS technology for enhanced performance in low-voltage scenarios. It is part of a broader range of semiconductor solutions designed for power management and signal processing applications across various industrial and consumer electronics sectors.