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FQI11N40TU is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 400V 11.4A I2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQI11N40TU
- Description：MOSFET N-CH 400V 11.4A I2PAK
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：480mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.13W (Ta), 147W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for FQI11N40TU
Single FETs, MOSFETs Overview
The FQI11N40TU is an N-channel enhancement mode MOSFET manufactured by Fairchild Semiconductor, belonging to the QFET series. It features a 400V drain-source voltage rating and a continuous drain current of 11A. The device utilizes a TO-220AB through-hole package with three pins. Key electrical parameters include a maximum on-resistance of 530 milliohms at a gate-source voltage of 10V. The component operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation capacity of 135W.
Single FETs, MOSFETs Feature Summary
- High-voltage capability optimized for robust switching applications
- Low on-resistance design for efficient power conduction
- Through-hole mounting configuration for secure mechanical attachment
Single FETs, MOSFETs Applications
- General purpose inverters
- Motor control circuits
- Power supply systems
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer origin carefully as Fairchild Semiconductor's discrete semiconductor division was acquired by onsemi. Confirm that the specific part number corresponds to the original Fairchild production run if legacy sourcing is required. Check datasheet revisions to ensure pinout and thermal characteristics match the intended circuit design requirements.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage N-channel MOSFET with moderate current handling is required in a through-hole package. Compare the 530 milliohm on-resistance against alternative devices to ensure thermal management meets system constraints. Ensure the gate drive voltage supports the specified threshold for full enhancement.
Single FETs, MOSFETs Part Context
This device is part of the QFET family, which integrates advanced trench technology to achieve low on-resistance and fast switching speeds. The TO-220AB package provides reliable thermal performance for medium-power applications. The component serves as a fundamental switching element in various industrial and consumer electronic power stages.
Single FETs, MOSFETs Replacement Considerations
Direct replacements may include the FQP11N40C from onsemi, which shares similar electrical specifications and package type. Verify compatibility regarding thermal resistance and pin configuration before substitution.
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