FQP6N80C

Single FETs, MOSFETs Overview

The FQP6N80C is an N-Channel Power MOSFET from onsemi's QFET C-Series, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 5.5 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2.5 Ohms at 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 30 nC, input capacitance (Ciss) of 1310 pF, and a threshold voltage (Vgs(th)) of 5 V. It operates within a junction temperature range of -55°C to 150°C with a power dissipation rating of 158 W.

Single FETs, MOSFETs Feature Summary

• High Voltage Capability: Engineered with an 800 V breakdown voltage suitable for demanding power conversion topologies.
• Low Gate Charge: Optimized gate charge characteristics facilitate efficient switching performance and reduced driver losses.
• Robust Thermal Management: Designed for through-hole mounting with significant power dissipation capacity under case temperature conditions.

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Industrial motor control systems
• General-purpose power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to ensure correct packaging and compliance status. Confirm RoHS and REACH material declarations are aligned with project requirements. Check for any recent Product Change Notifications regarding packaging or passivation materials before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V rating is required for high-side or low-side switching in isolated power stages. Compare Rds(on) and Qg values against alternative TO-220 packages to balance conduction losses with switching speed. Ensure thermal design accounts for the 158 W dissipation limit at case temperature rather than ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's QFET family, utilizing advanced planar technology for improved ruggedness and switching efficiency. It serves as a successor to earlier generations of high-voltage discrete MOSFETs, offering enhanced reliability for industrial and commercial power electronics designs requiring robust N-channel performance.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the FQP5N80 and FQP8N80C from the same manufacturer series. Verify pinout compatibility and thermal resistance characteristics when cross-referencing with other 800 V TO-220-3 devices.