FQP9N50C

Single FETs, MOSFETs Overview

The FQP9N50C is a 500V N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes planar stripe DMOS technology to minimize on-state resistance and enhance switching performance. The device features a maximum continuous drain current of 9A at 25°C case temperature, with a typical static drain-source on-resistance of 0.65Ω at VGS=10V. Key electrical parameters include a total gate charge of 28nC and a reverse transfer capacitance of 24pF. It supports a single pulsed avalanche energy of 360mJ and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
• Capable of withstanding high energy pulses in both avalanche and commutation modes.
• Features improved dv/dt capability and fast switching characteristics.

Single FETs, MOSFETs Applications

• High efficiency switched mode power supplies
• Active power factor correction circuits
• Electronic lamp ballasts based on half bridge topology

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as this component was originally produced by Fairchild Semiconductor prior to its acquisition by onsemi. Confirm that the specific revision matches the required datasheet specifications. Ensure the package type aligns with the intended PCB footprint requirements. Validate compliance with relevant safety standards if used in regulated environments.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust avalanche energy handling and low gate charge. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate the on-resistance variation against temperature to ensure stable operation across the full operating range. Verify compatibility with driving voltages given the threshold voltage specifications.

Single FETs, MOSFETs Part Context

This part belongs to the QFET series of power MOSFETs designed for general-purpose switching applications. It represents an evolution in planar DMOS technology aimed at improving efficiency in power conversion systems. The device is distinct from other high-voltage MOSFETs due to its specific combination of low gate charge and high avalanche ruggedness.

Single FETs, MOSFETs Replacement Considerations

Check for equivalents such as the FQPF9N50C variant which shares identical electrical specifications but differs in package style. Ensure any substitute maintains the same voltage rating, current capacity, and thermal characteristics to guarantee circuit compatibility.