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FQPF4N90C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 4A TO220F. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQPF4N90C
- Description：MOSFET N-CH 900V 4A TO220F
- Series：QFET®
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：960 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：47W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for FQPF4N90C
Single FETs, MOSFETs Overview
The onsemi FQPF4N90C is an N-channel enhancement mode MOSFET from the QFET series, utilizing planar stripe and DMOS technology. It features a maximum drain-source voltage of 900 V and a continuous drain current of 4 A at 25°C case temperature. The device exhibits a maximum static drain-source on-resistance of 4.2 Ω at VGS = 10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TO-220F through-hole package with three pins.
Single FETs, MOSFETs Feature Summary
- Utilizes proprietary planar stripe and DMOS technology for optimized performance
- Engineered for high avalanche energy strength and robust operation
- Features low gate charge characteristics to support efficient switching
- Subjected to 100% avalanche testing to ensure reliability
Single FETs, MOSFETs Applications
- Switching mode power supplies
- Active power factor correction circuits
- Electronic lamp ballasts
- Motor drive systems
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix designation against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging variations. Ensure that the procurement channel provides authentic components with traceable documentation. Confirm compliance with relevant environmental directives such as RoHS requirements prior to integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high voltage blocking capability combined with moderate current handling in a through-hole configuration. Consider the thermal resistance characteristics when designing heat dissipation strategies. Evaluate the gate charge specifications relative to the driving circuit capabilities to optimize switching efficiency and minimize losses.
Single FETs, MOSFETs Part Context
This device belongs to the QFET family of power MOSFETs manufactured by onsemi. The series is characterized by advanced silicon technologies designed to reduce on-resistance while maintaining high breakdown voltage ratings. These components are widely utilized in industrial and consumer electronics where reliable high-voltage switching is required.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the FQP4N90C variant which shares similar electrical characteristics but may differ in thermal resistance values due to package construction differences. Verify pinout compatibility and absolute maximum ratings before substituting.
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