FQPF7N20

Single FETs, MOSFETs Overview

The FQPF7N20 is a single N-Channel enhancement mode power MOSFET manufactured by onsemi. It utilizes QFET technology to achieve low on-state resistance and fast switching performance. The device features a drain-source voltage rating of 200 V and a continuous drain current capability of 6.6 A. It is housed in a TO-220FP (TO-220 Full Pack) surface-mount package with three terminals. The component operates within a junction temperature range of -55°C to +150°C and includes built-in avalanche ruggedness.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary QFET planar stripe DMOS technology for minimized on-state resistance and superior switching efficiency.
• Features high avalanche energy capability, allowing reliable operation under commutation modes and high-energy pulses.
• Designed for low-level gate drive requirements, enabling direct connection to standard logic interfaces.

Single FETs, MOSFETs Applications

• High-efficiency switching DC/DC converters
• Switch mode power supplies (SMPS)
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status as manufacturing processes evolve. Ensure the selected variant matches the required thermal dissipation characteristics for the intended application environment before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust 200V blocking capability with moderate current handling. The TO-220FP package offers a balance between thermal performance and surface-mount assembly convenience. Evaluate the gate charge parameters against the driving circuit's speed requirements to ensure optimal switching transitions without excessive driver loss.

Single FETs, MOSFETs Part Context

This part belongs to the FQPF series of N-Channel Power MOSFETs from onsemi. The series is characterized by the use of advanced planar stripe DMOS technology, which differentiates it from older planar technologies by offering lower specific on-resistance and improved ruggedness. These devices are engineered specifically for general-purpose power switching applications where reliability and efficiency are critical.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 200V Vds, 6.6A Id, and TO-220FP package constraints. Verify that substitute components maintain equivalent avalanche energy ratings and gate threshold voltage ranges to ensure circuit compatibility without redesigning the gate drive network.