FQS4900TF

FET, MOSFET Arrays Overview

The FQS4900TF is a dual MOSFET module from onsemi, integrating one N-channel and one P-channel device in an SOIC-8 surface-mount package. The N-channel component features a 60V drain-source breakdown voltage (Vds), 300mA continuous drain current (Id), and 550mΩ typical on-resistance (Rds(on)). The P-channel counterpart offers a 300V Vds, 1.3A Id, and 15.5Ω Rds(on). Both channels operate with a ±20V gate-source voltage (Vgs) rating and exhibit enhancement mode behavior. The device supports a maximum power dissipation of 2W and functions within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration combining N-channel and P-channel MOSFETs for complementary switching applications
• High-voltage P-channel capability suitable for load switch and high-side drive roles
• Low-gate-charge design facilitating efficient driving in space-constrained PCB layouts

FET, MOSFET Arrays Applications

• Load switches requiring isolated high-side or low-side control
• Complementary push-pull output stages in signal conditioning circuits
• DC-DC converter synchronous rectification or bootstrap drive circuits

FET, MOSFET Arrays Procurement Notes

Verify the obsolete status of this part number through official onsemi channels before design finalization. Confirm availability of alternative components if long-term supply continuity is required. Ensure that the SOIC-8 footprint matches your existing board layout constraints. Check for any specific handling requirements related to the silicon technology used in this legacy product line.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual solution is needed for mixed-polarity switching tasks. The N-channel option suits low-voltage ground-referenced loads, while the P-channel handles higher voltage sources. Evaluate thermal management capabilities given the 2W dissipation limit in the small outline package. Consider gate charge values for switching frequency requirements in power management designs.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's discrete MOSFET portfolio, specifically designed for general-purpose switching applications. It utilizes standard silicon technology housed in a lead-free SOIC-8 package. The product represents a consolidated solution for designers needing both N-type and P-type transistors in a single footprint, reducing component count compared to using separate discrete devices.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult onsemi's cross-reference tools or technical support for equivalent alternatives. Verify pinout compatibility and electrical parameter margins before substituting with other manufacturers' dual MOSFETs.