FQS4903TF

FET, MOSFET Arrays Overview

The FQS4903TF is a dual N-channel enhancement mode MOSFET from onsemi's QFET series, housed in an 8-pin SOIC surface-mount package. It features a maximum drain-source voltage of 500 V and a continuous drain current of 370 mA per channel. The device utilizes proprietary planar stripe and DMOS technology to achieve a typical on-resistance of 6.2 Ω at 10 V gate drive. Designed for robust performance, it supports a maximum power dissipation of 2 W and operates within a temperature range of -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact surface-mount package
• High-voltage capability with 500 V breakdown rating suitable for demanding applications
• Proprietary planar stripe and DMOS technology ensures reliable switching performance

FET, MOSFET Arrays Applications

• PC switch pulse circuits
• Photodiode transistor interfaces
• General-purpose high-voltage switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the 8-pin SOIC tape-and-reel packaging aligns with your assembly line requirements. Ensure thermal management strategies account for the 2 W power dissipation limit under expected operating conditions to maintain reliability.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required for space-constrained designs. The 500 V rating distinguishes it from lower-voltage alternatives, making it appropriate for higher potential circuits. Consider the 6.2 Ω on-resistance for efficiency calculations in low-current switching scenarios where voltage drop impacts system performance.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's QFET series, which emphasizes high-voltage performance in small packages. As a dual MOSFET, it consolidates two independent channels into one footprint, reducing board area compared to discrete solutions. The use of planar stripe and DMOS technology places it within the company's established lineup of reliable power switching devices.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs with comparable 500 V ratings and SOIC-8 packaging. Verify pinout compatibility and on-resistance values to ensure circuit functionality remains unchanged during replacement.

FET, MOSFET Arrays FAQ

What technology is used to manufacture the FQS4903TF?

It is produced using onsemi's proprietary planar stripe and DMOS technology.

Is the FQS4903TF a single or dual channel device?

It is a dual N-channel enhancement mode MOSFET.