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FS03MR12A6MA1LBBPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 6N-CH 1200V AG-HYBRIDD. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FS03MR12A6MA1LBBPSA1
- Description：MOSFET 6N-CH 1200V AG-HYBRIDD
- Series：HybridPACK™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：6 N-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：400A
- Rds On (Max) @ Id, Vgs：3.7mOhm @ 400A, 15V
- Vgs(th) (Max) @ Id：5.55V @ 240mA
- Gate Charge (Qg) (Max) @ Vgs：1320nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：42500pF @ 600V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-HYBRIDD-2
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FS03MR12A6MA1LBBPSA1
FET, MOSFET Arrays Overview
The FS03MR12A6MA1LBBPSA1 is a HybridPACK Drive module utilizing CoolSiC Automotive MOSFET technology. It features a 1200 V drain-source voltage and a nominal DC drain current of 400 A at 25°C junction temperature. The device incorporates silicon carbide semiconductor material to achieve low on-resistance and switching losses. Key electrical parameters include a maximum stray inductance of 8.5 nH, an operating junction temperature range up to 150°C, and a thermal resistance from junction to cooling fluid of 0.108 K/W per MOSFET under specified flow conditions.
FET, MOSFET Arrays Feature Summary
- Utilizes silicon carbide (CoolSiC) technology for high efficiency and low switching losses
- Features a direct-cooled PinFin base plate with high-performance Si3N4 ceramic insulation
- Includes integrated NTC temperature sensor for precise thermal monitoring
- Employs pressFIT contact technology for robust PCB assembly
FET, MOSFET Arrays Applications
- (Hybrid) electric vehicles (H)EV traction inverters
- Automotive motor drives
- Commercial agriculture vehicle power systems
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure compatibility with AQG 324 automotive qualification standards required for the target application. Confirm that the selected variant matches the required thermal and electrical specifications for the intended system design.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring high power density and compact footprint within the HybridPACK Drive family. Consider the 1200 V rating and 400 A nominal current capability when designing the inverter stage. Evaluate the thermal management requirements based on the specified thermal resistance and direct-cooling capabilities.
FET, MOSFET Arrays Part Context
This module belongs to the HybridPACK Drive series, designed specifically for electric vehicle traction inverters. It represents the integration of CoolSiC G2 MOSFETs into a standardized package format. The series offers scalability across different power classes while maintaining a consistent footprint for ease of design implementation.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Cross-reference technical parameters such as voltage class, current rating, and package dimensions before considering any substitute part numbers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
