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The FS100R07PE4BOSA1 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT4 technology and Emitter Controlled 4 diodes. It features PressFIT terminals and an integrated NTC thermistor. The collector-emitter voltage (VCES) is rated at 650 V, with a continuous DC collector current (IC nom) of 100 A at TC = 70°C and a repetitive peak collector current (ICRM) of 200 A. The typical collector-emitter saturation voltage (VCEsat) is 1.55 V at Tvj = 25°C. Total power dissipation (Ptot) is 335 W at TC = 25°C. The operating junction temperature range extends from -40°C to +150°C.
Verify the exact ordering suffix against official Infineon documentation to confirm terminal configuration and specific variant details. Ensure compliance with RoHS standards and check for any specific application notes regarding mounting torque and thermal interface material requirements before procurement.
Select this module for applications requiring 650 V blocking capability and up to 100 A continuous current. Consider the 0.45 K/W thermal resistance per IGBT and 0.75 K/W per diode when designing heatsinking. Verify that the system stray inductance remains within limits to ensure safe short-circuit behavior and prevent overvoltage during switching.
This component belongs to the EconoPACK™4 series manufactured by Infineon Technologies. It utilizes silicon-based IGBT4 technology combined with Emitter Controlled 4 diodes. The module is designed for industrial applications and includes mechanical features such as PressFIT connections and an internal Al2O3 basic insulation layer.
FS100R07PE4
The module can withstand a short-circuit condition for a maximum duration of 10 µs at Tvj = 150°C.
The NTC thermistor has a rated resistance (R25) of 5.00 kΩ at TC = 25°C.
The module stray inductance (LsCE) is specified as 20 nH.