SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS100R12KT3BOSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3 technology. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 100 A at 25°C (140 A at 80°C case temperature). The module incorporates high-efficiency emitter-controlled diodes with a forward voltage of 1.65 V at 25°C. Packaged in EconoPACK™3, it includes an integrated NTC thermistor rated at 5 kΩ at 25°C for thermal monitoring. Key electrical parameters include a gate charge of 0.9 µC, internal gate resistance of 7.5 Ω, and a maximum repetitive peak collector current of 200 A.
Verify the specific BOSA1 suffix against official documentation to confirm material content and compliance status. Confirm RoHS compliance details as indicated in the datasheet. Ensure that the component matches the required industrial quality grade and package dimensions before procurement.
Select this module for applications requiring 1200 V blocking capability and up to 100 A continuous current. Consider the 0.26 K/W junction-to-case thermal resistance for heatsink design. Verify that the operating temperature range of -40°C to 125°C aligns with system requirements.
This component belongs to the FS100R12KT series of six-pack IGBT modules. It represents the third generation of Trenchstop technology, designed to balance switching losses and conduction voltage. The EconoPACK™3 form factor is standard for medium-power industrial applications.
Consult official replacement guides for direct substitutes. Cross-reference pinouts and thermal characteristics when considering alternative packages or newer generations like IGBT4 or IGBT7.
The typical VCEsat is 1.70 V at 25°C and 1.90 V at 125°C, measured at IC = 100 A and VGE = 15 V.
Yes, the module integrates an NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C for temperature monitoring.
The module can withstand a short-circuit current of 400 A for a duration of up to 10 µs at Tvj = 125°C.